2SA1179 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 features high breakdown voltage absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -55 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -5 v collector current i c -150 ma collector dissipation p c 200 mw jumction temperature t j 150 storage temperature t stg -50 to 150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage v cbo i c = -10a , i e =0a -55 v collector-emitter breakdown voltage v ceo i c =-1ma,r be = -50 v emitter-base breakdown voltage v ebo i e = -10a , i c =0a -5 v collector cutoff current i cbo v cb = -35v , i e =0a -0.1 a emitter cutoff current i ebo v eb =-4v,i c =0 -0.1 a dc current gain h fe v ce =-6v,i c = -1ma 200 400 collector-emitter saturation voltage v ce(sat) i c = -50ma , i b = -5ma -0.5 v base-emitter saturation voltage v be(sat) i c = -50ma , i b = -5ma -1.0 v output capacitance c ob v cb =-6v,i e =0 ,f = 1mhz 4.0 pf transition frequency f t v ce =-6v,i c = -10ma 180 mhz marking marking m sales@twtysemi.com 1 of 1 http://www.twtysemi.com product specification 4008-318-123
|
